Phase change memory technology

Advances in Phase Change Memory Technology

Phase Change Memory is one of the best candidates for next generation non-volatile memory which can enlarge its applications segment, due to improved performances, and can fulfil the requirements for future down-scaling. Thermal, electrical and geometrical aspects controlling the functionality of a chalcogenide-based phase change memory cell are analysed. Processing condition effects, material ...

Phase-change random access memory: A scalable technology

random access memory: A scalable technology S. Raoux G. W. Burr M. J. Breitwisch C. T. Rettner Y.-C. Chen R. M. Shelby M. Salinga D. Krebs S.-H. Chen H.-L. Lung C. H. Lam Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller i...

Impact of Technology Scaling on Phase-Change Memory Performance

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...

Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected...